SUD23N06-31-GE3 - SMD N channel transistors

SUD23N06-31-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 17.1A; 31.25W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 17.1A
Power dissipation 31.25W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 45mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat