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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SUD19P06-60-GE3

SUD19P06-60-GE3 - SMD P channel transistors

SUD19P06-60-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.19A; 2.3W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -8.19A
Power dissipation 2.3W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 60mΩ
Mounting SMD
Gate charge 26nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat