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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SUD09P10-195-GE3

SUD09P10-195-GE3 - SMD P channel transistors

SUD09P10-195-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -8.8A; Idm: -15A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -8.8A
Pulsed drain current -15A
Power dissipation 32.1W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 0.195Ω
Mounting SMD
Gate charge 34.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat