STY60NM60 - THT N channel transistors

STY60NM60
Description

Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 37.8A
Pulsed drain current 60A
Power dissipation 460W
Case MAX247
Gate-source voltage ±30V
On-state resistance 55mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat