STY60NM50 - THT N channel transistors

STY60NM50
Description

Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 500V
Drain current 37.8A
Power dissipation 560W
Case MAX247
Gate-source voltage ±30V
On-state resistance 50mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat