STY60NK30Z - THT N channel transistors

STY60NK30Z
Description

Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 300V
Drain current 37.5A
Power dissipation 450W
Case MAX247
Gate-source voltage ±30V
On-state resistance 45mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat