STW9NK95Z - THT N channel transistors

STW9NK95Z
Description

Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 950V
Drain current 4.41A
Pulsed drain current 28A
Power dissipation 160W
Case TO247
Gate-source voltage ±30V
On-state resistance 1.15Ω
Mounting THT
Gate charge 56nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat