STW8N120K5 - THT N channel transistors

STW8N120K5
Description

Транзистор: N-MOSFET; польовий; 1,2кВ; 3,5А; Idm: 12А; 130Вт; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 3.5A
Pulsed drain current 12A
Power dissipation 130W
Case TO247
Gate-source voltage ±30V
On-state resistance 1.65Ω
Mounting THT
Gate charge 13.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat