STW70N60DM6-4 - THT N channel transistors

STW70N60DM6-4
Description

Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 39A
Pulsed drain current 220A
Power dissipation 390W
Case TO247-4
Gate-source voltage ±25V
On-state resistance 42mΩ
Mounting THT
Gate charge 99nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Version ESD
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Development and design: Seventh Cat