STW57N65M5-4 - THT N channel transistors

STW57N65M5-4
Description

Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ V
Polarisation unipolar
Drain-source voltage 650V
Drain current 26.5A
Power dissipation 250W
Case TO247-4
Gate-source voltage ±25V
On-state resistance 56mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Version ESD
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Development and design: Seventh Cat