STW33N60DM2 - THT N channel transistors

STW33N60DM2
Description

Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 15.5A
Pulsed drain current 96A
Power dissipation 190W
Case TO247
Gate-source voltage ±25V
On-state resistance 0.11Ω
Mounting THT
Gate charge 43nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat