STW18NM60N - THT N channel transistors

STW18NM60N
Description

Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 8.19A
Pulsed drain current 52A
Power dissipation 130W
Case TO247
Gate-source voltage ±25V
On-state resistance 0.25Ω
Mounting THT
Gate charge 34nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat