STW18N60DM2 - THT N channel transistors

STW18N60DM2
Description

Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ DM2
Polarisation unipolar
Drain-source voltage 600V
Drain current 7.6A
Power dissipation 90W
Case TO247
Gate-source voltage ±25V
On-state resistance 0.26Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat