STW13NK100Z - THT N channel transistors

STW13NK100Z
Description

Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 1kV
Drain current 8.2A
Power dissipation 350W
Case TO247
Gate-source voltage ±30V
On-state resistance 0.56Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat