STW11NK90Z - THT N channel transistors

STW11NK90Z
Description

Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 900V
Drain current 5.8A
Pulsed drain current 36.8A
Power dissipation 200W
Case TO247
Gate-source voltage ±30V
On-state resistance 980mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat