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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / STQ2HNK60ZR-AP

STQ2HNK60ZR-AP - THT N channel transistors

STQ2HNK60ZR-AP
Description

Transistor: N-MOSFET; unipolar; 600V; 500mA; Idm: 2A; 3W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 0.5A
Pulsed drain current 2A
Power dissipation 3W
Case TO92 Formed
Gate-source voltage ±30V
On-state resistance 4.8Ω
Mounting THT
Gate charge 11nC
Kind of package Ammo Pack
Kind of channel enhancement
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Development and design: Seventh Cat