STQ1NK80ZR-AP - THT N channel transistors

STQ1NK80ZR-AP
Description

Transistor: N-MOSFET; unipolar; 800V; 250mA; Idm: 5A; 2.5W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 0.25A
Pulsed drain current 5A
Power dissipation 2.5W
Case TO92 Formed
Gate-source voltage ±30V
On-state resistance 16Ω
Mounting THT
Gate charge 7.7nC
Kind of package Ammo Pack
Kind of channel enhancement
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Development and design: Seventh Cat