STQ1NK60ZR-AP - THT N channel transistors

STQ1NK60ZR-AP
Description

Transistor: N-MOSFET; unipolar; 600V; 300mA; Idm: 0.189A; 3W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 0.3A
Pulsed drain current 0.189A
Power dissipation 3W
Case TO92 Formed
Gate-source voltage ±30V
On-state resistance 15Ω
Mounting THT
Gate charge 4.9nC
Kind of package Ammo Pack
Kind of channel enhancement
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Development and design: Seventh Cat