STP9N60M2 - THT N channel transistors

STP9N60M2
Description

Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 5.5A
Power dissipation 60W
Case TO220-3
On-state resistance 780mΩ
Mounting THT
Gate charge 10nC
Kind of channel enhancement
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Development and design: Seventh Cat