STP6N60M2 - THT N channel transistors

STP6N60M2
Description

Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ || Plus
Polarisation unipolar
Drain-source voltage 600V
Drain current 2.9A
Power dissipation 60W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 1.2Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat