STP5NK60Z - THT N channel transistors

STP5NK60Z
Description

Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 3.16A
Pulsed drain current 20A
Power dissipation 90W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 1.6Ω
Mounting THT
Gate charge 34nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat