STP33N65M2 - THT N channel transistors

STP33N65M2
Description

Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 190W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 24A
Pulsed drain current 96A
Power dissipation 190W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.14Ω
Mounting THT
Gate charge 41.5nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat