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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / STP33N60DM2

STP33N60DM2 - THT N channel transistors

STP33N60DM2
Description

Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ DM2
Polarisation unipolar
Drain-source voltage 600V
Drain current 15.5A
Pulsed drain current 96A
Power dissipation 190W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.13Ω
Mounting THT
Gate charge 43nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat