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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / STP315N10F7

STP315N10F7 - THT N channel transistors

STP315N10F7
Description

Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology STripFET™ F7
Polarisation unipolar
Drain-source voltage 100V
Drain current 120A
Pulsed drain current 720A
Power dissipation 315W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 2.7mΩ
Mounting THT
Gate charge 180nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat