STP310N10F7 - THT N channel transistors

STP310N10F7
Description

Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology DeepGATE™
STripFET™ VII
Polarisation unipolar
Drain-source voltage 100V
Drain current 120A
Power dissipation 315W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 2.7mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat