STP2NK100Z - THT N channel transistors

STP2NK100Z
Description

Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 1kV
Drain current 1.6A
Pulsed drain current 7.4A
Power dissipation 70W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 8.5Ω
Mounting THT
Gate charge 16nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat