STP26NM60N - THT N channel transistors

STP26NM60N
Description

Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ ||
Polarisation unipolar
Drain-source voltage 600V
Drain current 12.6A
Power dissipation 140W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 135mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat