STP24NM60N - THT N channel transistors

STP24NM60N
Description

Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ ||
Polarisation unipolar
Drain-source voltage 650V
Drain current 11A
Pulsed drain current 68A
Power dissipation 125W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.19Ω
Mounting THT
Gate charge 44nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat