STP22NM60N - THT N channel transistors

STP22NM60N
Description

Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ ||
Polarisation unipolar
Drain-source voltage 600V
Drain current 16A
Pulsed drain current 64A
Power dissipation 125W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.22Ω
Mounting THT
Gate charge 44nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat