STP20NM60 - THT N channel transistors

STP20NM60
Description

Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 12.6A
Pulsed drain current 80A
Power dissipation 192W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.29Ω
Mounting THT
Gate charge 54nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat