STP20NM50FD - THT N channel transistors

STP20NM50FD
Description

Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology FDmesh™
Polarisation unipolar
Drain-source voltage 500V
Drain current 14A
Pulsed drain current 80A
Power dissipation 192W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.25Ω
Mounting THT
Gate charge 53nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat