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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / STP18NM60N

STP18NM60N - THT N channel transistors

STP18NM60N
Description

Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ ||
Polarisation unipolar
Drain-source voltage 600V
Drain current 8.2A
Pulsed drain current 52A
Power dissipation 110W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.285Ω
Mounting THT
Gate charge 35nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat