STP18N60M2 - THT N channel transistors

STP18N60M2
Description

Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; Idm: 52A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ || Plus
Polarisation unipolar
Drain-source voltage 650V
Drain current 8A
Pulsed drain current 52A
Power dissipation 110W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.28Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat