STP150N10F7 - THT N channel transistors

STP150N10F7
Description

Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology STripFET™ F7
Polarisation unipolar
Drain-source voltage 100V
Drain current 110A
Pulsed drain current 440A
Power dissipation 250W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 4.2mΩ
Mounting THT
Gate charge 117nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat