STP130N6F7 - THT N channel transistors

STP130N6F7
Description

Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 80A; Idm: 320A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology STripFET™ F7
Polarisation unipolar
Drain-source voltage 60V
Drain current 80A
Pulsed drain current 320A
Power dissipation 160W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 5mΩ
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat