STP12N60M2 - THT N channel transistors

STP12N60M2
Description

Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ M2
Polarisation unipolar
Drain-source voltage 600V
Drain current 5.7A
Pulsed drain current 36A
Power dissipation 85W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.45Ω
Mounting THT
Gate charge 16nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat