STP12N50M2 - THT N channel transistors

STP12N50M2
Description

Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ M2
Polarisation unipolar
Drain-source voltage 500V
Drain current 7A
Pulsed drain current 40A
Power dissipation 85W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.38Ω
Mounting THT
Gate charge 15nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat