STP120N4F6 - THT N channel transistors

STP120N4F6
Description

Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology STripFET™ H6
Polarisation unipolar
Drain-source voltage 40V
Drain current 80A
Pulsed drain current 320A
Power dissipation 110W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 4.3mΩ
Mounting THT
Gate charge 65nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat