STP11NM60FD - THT N channel transistors

STP11NM60FD
Description

Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology FDmesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 7A
Power dissipation 160W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.45Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat