STP11NM60 - THT N channel transistors

STP11NM60
Description

Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 11A
Pulsed drain current 44A
Power dissipation 160W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.45Ω
Mounting THT
Gate charge 30nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat