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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / STP11N65M2

STP11N65M2 - THT N channel transistors

STP11N65M2
Description

Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ M2
Polarisation unipolar
Drain-source voltage 650V
Drain current 4.4A
Pulsed drain current 28A
Power dissipation 85W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.68Ω
Mounting THT
Gate charge 12.5nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat