STP10NM60N - THT N channel transistors

STP10NM60N
Description

Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ ||
Polarisation unipolar
Drain-source voltage 600V
Drain current 5A
Pulsed drain current 32A
Power dissipation 70W
Case TO220-3
Gate-source voltage ±25V
On-state resistance 0.55Ω
Mounting THT
Gate charge 19nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat