STP105N3LL - THT N channel transistors

STP105N3LL
Description

Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology STripFET™ H6
Polarisation unipolar
Drain-source voltage 30V
Drain current 105A
Pulsed drain current 320A
Power dissipation 140W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 4.5mΩ
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat