STN3P6F6 - SMD P channel transistors

STN3P6F6
Description

Transistor: P-MOSFET; unipolar; -60V; -2A; 2.6W; SOT223; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor P-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage -60V
Drain current -2A
Power dissipation 2.6W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.16Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat