STN1HNK60 - SMD N channel transistors

STN1HNK60
Description

Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 0.4A
Power dissipation 3.3W
Case SOT223
Gate-source voltage ±30V
On-state resistance 8.5Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat