STI18N65M2 - THT N channel transistors

STI18N65M2
Description

Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 48A; 110W; I2PAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 12A
Pulsed drain current 48A
Power dissipation 110W
Case I2PAK
Gate-source voltage ±25V
On-state resistance 0.33Ω
Mounting THT
Gate charge 20nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat