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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / STGWT40H65DFB

STGWT40H65DFB - THT IGBT transistors

STGWT40H65DFB
Description

Transistor: IGBT; 650V; 40A; 283W; TO3P

Specifications
Manufacturer STMicroelectronics
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 40A
Power dissipation 283W
Case TO3P
Gate-emitter voltage ±20V
Pulsed collector current 160A
Mounting THT
Gate charge 0.21µC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat