STGP10M65DF2 - THT IGBT transistors

STGP10M65DF2
Description

Transistor: IGBT; 650V; 10A; 115W; TO220AB

Specifications
Manufacturer STMicroelectronics
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 10A
Power dissipation 115W
Case TO220AB
Gate-emitter voltage ±20V
Pulsed collector current 40A
Mounting THT
Gate charge 28nC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat