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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / STGB30M65DF2

STGB30M65DF2 - SMD IGBT transistors

STGB30M65DF2
Description

Transistor: IGBT; 650V; 30A; 258W; D2PAK

Specifications
Manufacturer STMicroelectronics
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 30A
Power dissipation 258W
Case D2PAK
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting SMD
Gate charge 80nC
Kind of package reel
tape
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat