STGB19NC60HDT4 - SMD IGBT transistors

STGB19NC60HDT4
Description

Transistor: IGBT; 600V; 19A; 130W; D2PAK

Specifications
Manufacturer STMicroelectronics
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 19A
Power dissipation 130W
Case D2PAK
Gate-emitter voltage ±20V
Pulsed collector current 60A
Mounting SMD
Gate charge 53nC
Kind of package reel
tape
Features of semiconductor devices integrated anti-parallel diode
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat